Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films

	Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films
	Yang TY(杨铁莹); Qin XB(秦秀波); Wang HH(王焕华); Jia QJ(贾全杰); Yu RS(于润升); Wang BY(王宝义); Wang JO(王嘉鸥); Kui RX(奎热西); Jiang XM(姜晓明); Yang, TY
刊名	POWDER DIFFRACTION
	2010
卷号	25 期号:3 页码:S36-S39
关键词	p-type transparent conducting oxide Ga-doped SnO2 thin film reactive rf-magnetron sputtering microstructure X-ray diffraction X-ray specular reflectivity
通讯作者	[Yang, Tieying ; Qin, Xiubo ; Wang, Huan-hua ; Jia, Quanjie ; Yu, Runsheng ; Wang, Baoyi ; Wang, Jiaou ; Ibrahim, Kurash ; Jiang, Xiaoming] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
英文摘要	Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films. (C) 2010 International Centre for Diffraction Data. [DOI: 10.1154/1.3478457]
学科主题	Materials Science
类目[WOS]	Materials Science, Characterization & Testing
研究领域[WOS]	Materials Science
原文出处	SCI
语种	英语
WOS记录号	WOS:000282386800010
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/240332]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Yang TY,Qin XB,Wang HH,et al. Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films[J]. POWDER DIFFRACTION,2010,25(3):S36-S39.
APA	杨铁莹.,秦秀波.,王焕华.,贾全杰.,于润升.,...&Jiang, XM.(2010).Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films.POWDER DIFFRACTION,25(3),S36-S39.
MLA	杨铁莹,et al."Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films".POWDER DIFFRACTION 25.3(2010):S36-S39.