Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing

	Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing
	Hao XP(郝小鹏); Yu RS(于润升); Wang BY(王宝义); Wang DN(王丹妮); Ma CX(马创新); Wei L(魏龙); Hao, XP; Yu, RS; Wang, BY; Chen, HL
刊名	APPLIED SURFACE SCIENCE
	2007
卷号	253 期号:16 页码:6868-6871
关键词	slow positron beam nitrogen ion implantation rapid thermal processing
通讯作者	Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China ; Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China ; Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
英文摘要	In this experiment, nitrogen ions were implanted into CZ-silicon wafer at 100 keV at room temperature with the fluence of 5 x 10(15) N-2(+)/cm(2), followed by rapid thermal processing (RTP) at different temperatures. The single detector Doppler broadening and coincidence Doppler broadening measurements on slow positron beam were carried out to characterize the defects in the as-implanted silicon and RTP-treated samples. It is found that both nitrogen-vacancy complexes (N-Vsi) and oxygen-vacancy complexes (O-Vsi) produced by nitrogen implantation diffuse back to the sample surface upon annealing. But the N-Vsi and the O-Vsi complete with each other and give a summed effect on positron annihilation characteristics. It is shown that the N-Vsi win out the O-Vsi in as-implanted sample and by RTP at 650 degrees C, 750 degrees C, which make the S-parameter increase; O-Vsi plays a dominant role after annealing above 850 degrees C, which makes the S parameter decrease. ((C) 2007 Elsevier B.V. All rights reserved.
学科主题	Chemistry; Materials Science; Physics
类目[WOS]	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
研究领域[WOS]	Chemistry ; Materials Science ; Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000247156100032
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/240097]
专题	高能物理研究所_多学科研究中心高能物理研究所_核技术应用研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Hao XP,Yu RS,Wang BY,et al. Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing[J]. APPLIED SURFACE SCIENCE,2007,253(16):6868-6871.
APA	郝小鹏.,于润升.,王宝义.,王丹妮.,马创新.,...&Wei, L.(2007).Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing.APPLIED SURFACE SCIENCE,253(16),6868-6871.
MLA	郝小鹏,et al."Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing".APPLIED SURFACE SCIENCE 253.16(2007):6868-6871.