Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy

	Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy
	Cui, J; He Q(贺庆); Jiang XM(姜晓明); He, Q; Jiang, XM; Fan, YL; Yang, XJ; Xue, F; Jiang, ZM
刊名	APPLIED PHYSICS LETTERS
	2003
卷号	83 期号:14 页码:2907-2909
通讯作者	Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China ; Inst High Energy Phys, BSRF, Beijing 100039, Peoples R China
英文摘要	SiGe quantum rings (QRs) were grown by partially capping on Ge quantum dots (QDs) on Si(001). Atomic force microscopy images show the shape transformation from QDs to QRs. Initial capping, with a Si layer thickness less than 2 nm, will result in the decrease of height of QDs and increase of base diameter of QDs. Capped with a Si layer, QDs will change into QRs. The mechanism of transformation from QDs to QRs is discussed. The strain will redistribute after capping, thus the strain energy relief, together with high Ge surface diffusion and Ge surface segregation at a relative high temperature of 680 degreesC, play the dominant role. (C) 2003 American Institute of Physics.
学科主题	Physics
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000185664000059
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/239841]
专题	高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Cui, J,He Q,Jiang XM,et al. Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy[J]. APPLIED PHYSICS LETTERS,2003,83(14):2907-2909.
APA	Cui, J.,贺庆.,姜晓明.,He, Q.,Jiang, XM.,...&Jiang, ZM.(2003).Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy.APPLIED PHYSICS LETTERS,83(14),2907-2909.
MLA	Cui, J,et al."Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy".APPLIED PHYSICS LETTERS 83.14(2003):2907-2909.