Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity

	Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity
	Zhou, BQ; Liu, FZ; Zhu, MF; Zhou, YQ; Wu, ZH; Chen, X; Wu ZH(吴忠华); Chen X(陈兴)
刊名	ACTA PHYSICA SINICA
	2007
卷号	56 期号:4 页码:2422-2427
关键词	grazing incidence X-ray reflectivity microcrystalline silicon film surface roughness growth mechanism
通讯作者	Inner Mongolia Normal Univ, Coll Phys & Elect Informat, Hohhot 010022, Peoples R China ; Chinese Acad Sci, Grad Sch, Inst Phys Sci, Beijing 100049, Peoples R China ; Chinese Acad Sci, Beijing Synchrotron Radiat Lab, Inst High Energy Phys, Beijing 100049, Peoples R China
英文摘要	The microcrystalline silicon films at different growth stages were deposited by plasma-enhanced chemical vapor deposition (PECVD). The reflectivity of grazing incidence X-ray from synchrotron radiation has been applied to investigate the evolution of surface roughness of these thin films. By study of surface morphology of microcrystalline silicon (mu c-Si: H), we understand their growth kinetics and growth mechanism. The results show that the growth exponent beta is 0.21 +/- 0.01 and 0.24 +/- 0.01 for mu c-Si: H films deposited on glass substrate at fixed substrate temperature, Under the following condition of electrode distance, pressure, if power density, H-2 dilutied at 200 degrees C to be 2 cm, 6.66 x 10(2) Pa and 0.22 W/cm(2), 99 % and 98 %, respectively. According to the KPZ model in the PECVD case the growth mechanism of the pc-Si: H films is a finite diffusion growth.
学科主题	Physics
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000245844300094
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/239749]
专题	高能物理研究所_多学科研究中心高能物理研究所_实验物理中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhou, BQ,Liu, FZ,Zhu, MF,et al. Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity[J]. ACTA PHYSICA SINICA,2007,56(4):2422-2427.
APA	Zhou, BQ.,Liu, FZ.,Zhu, MF.,Zhou, YQ.,Wu, ZH.,...&陈兴.(2007).Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity.ACTA PHYSICA SINICA,56(4),2422-2427.
MLA	Zhou, BQ,et al."Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity".ACTA PHYSICA SINICA 56.4(2007):2422-2427.