Atomic and electronic structure of (root 3x root 3)R 30 degrees-In phase on Cu(111) | |
Wang, P; Gao, X; Xun, K; Jia, JF; Qian, HJ; Liu, FQ; Ibrahim, K; Zhou, YM; Xue, QK; Wu, SC | |
刊名 | SOLID STATE COMMUNICATIONS |
2003 | |
卷号 | 125期号:9页码:509-514 |
关键词 | thin film growth surface topography band structure |
通讯作者 | Peking Univ, Dept Phys, Beijing 100871, Peoples R China ; Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Synchrotron Radiat Lab, Beijing 100039, Peoples R China |
英文摘要 | The atomic and electronic structure of (root3 x root3-)R 30degrees-In phase on Cu(l 11) was studied by synchrotron radiation photoemission and scanning tunneling microscopy (STM). The two-dimensional states of In induced bands in the (root3- X root3-)R 30degrees phase were measured by angle-resolved photoemission. Theoretical calculations have been made to obtain further information on the In induced bands. (C) 2003 Published by Elsevier Science Ltd. |
学科主题 | Physics |
类目[WOS] | Physics, Condensed Matter |
研究领域[WOS] | Physics |
原文出处 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000181213000011 |
内容类型 | 期刊论文 |
源URL | [http://ir.ihep.ac.cn/handle/311005/237763] |
专题 | 高能物理研究所_多学科研究中心 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Wang, P,Gao, X,Xun, K,et al. Atomic and electronic structure of (root 3x root 3)R 30 degrees-In phase on Cu(111)[J]. SOLID STATE COMMUNICATIONS,2003,125(9):509-514. |
APA | Wang, P.,Gao, X.,Xun, K.,Jia, JF.,Qian, HJ.,...&奎热西.(2003).Atomic and electronic structure of (root 3x root 3)R 30 degrees-In phase on Cu(111).SOLID STATE COMMUNICATIONS,125(9),509-514. |
MLA | Wang, P,et al."Atomic and electronic structure of (root 3x root 3)R 30 degrees-In phase on Cu(111)".SOLID STATE COMMUNICATIONS 125.9(2003):509-514. |
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