Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors

	Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors
	Xue, Yunzhou 1,2,3; Zhang, Yupeng 3; Liu, Yan 1,2; Liu, Hongtao 4; Song, Jingchao 3; Sophia, Joice 1,2; Liu, Jingying 3; Xu, Zaiquan 3; Xu, Qingyang 1,2; Wang, Ziyu 3
刊名	ACS NANO
	2016
卷号	10 期号:1 页码:573-580
关键词	molybdenum disulfide tungsten disulfide vertical heterojunction photodetector flexible device
英文摘要	Vertical heterojunctions of two two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention recently. A variety of heterojunctions can be constructed by stacking different TMDs to form fundamental building blocks in different optoelectronic devices such as photo-detectors, solar cells, and light-emitting diodes. However, these applications are significantly hampered by the challenges of large-scale production of van der Waals stacks of atomically thin materials. Here, we demonstrate scalable production of periodic patterns of few-layer WS2, MoS2, and their vertical heterojunction arrays by a thermal reduction sulfurization process. In this method, a two-step chemical vapor deposition approach was developed to effectively prevent the phase mixing of TMDs in an unpredicted manner, thus affording a well-defined interface between WS2 and MoS2 in the vertical dimension. As a result, large-scale, periodic arrays of few-layer WS2, MoS2, and their vertical heterojunctions can be produced with desired size and density. Photodetectors based on the as-produced MoS2/WS2 vertical heterojunction arrays were fabricated, and a high photoresponsivity of 2.3 A.W-1 at an excitation wavelength of 450 nm was demonstrated. Flexible photodetector devices using MoS2/WS2 heterojunction arrays were also demonstrated with reasonable signal/noise ratio. The approach in this work is also applicable to other TMD materials and can open up the possibilities of producing a variety of vertical van der Waals heterojunctions in a large scale toward optoelectronic applications.
收录类别	SCI
语种	英语
公开日期	2016-05-09
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/30081]
专题	化学研究所_有机固体实验室
作者单位	1.Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China 2.Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China 3.Monash Univ, Dept Mat Sci & Engn, Clayton, Vic 3800, Australia 4.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Xue, Yunzhou,Zhang, Yupeng,Liu, Yan,et al. Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors[J]. ACS NANO,2016,10(1):573-580.
APA	Xue, Yunzhou.,Zhang, Yupeng.,Liu, Yan.,Liu, Hongtao.,Song, Jingchao.,...&Bao, Qiaoliang.(2016).Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors.ACS NANO,10(1),573-580.
MLA	Xue, Yunzhou,et al."Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors".ACS NANO 10.1(2016):573-580.