Naphtho[2,1-b:3,4-b ']bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors

	Naphtho[2,1-b:3,4-b ']bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors
	Li, Zhaoguang 1,2; Zhang, Ji 3; Zhang, Kai 1,2; Zhang, Weifeng 3; Guo, Lei 1,2; Huang, Jianyao 3; Yu, Gui 3; Wong, Man Shing 1,2
刊名	JOURNAL OF MATERIALS CHEMISTRY C
	2015
卷号	3 期号:31 页码:8024-8029
英文摘要	A novel series of air-stable and highly extended p-conjugated naphtho[2,1-b:3,4-b']bisthieno[3,2-b][1]benzothiophene derivatives, NBTBT-n (n = 6, 8, 10, and 12) and NBTBTF-10, was developed. The influence of various alkoxy-side groups including straight chain with different chain lengths and branched chain on the FET device performance was also investigated. There was a progressive enhancement in the NBTBT-based OFET device performance with an increase in the annealing temperature. The OFET devices based on NBTBT-10 fabricated by vacuum deposition exhibited the best performance with a hole mobility of 0.25 cm(2) V-1 s(-1) and an on/off ratio of 10(5)-10(6) after annealing at 220 degrees C. In addition, fluorinated naphtho[2,1-b: 3,4-b']bisthieno[3,2-b][1] benzothiophene, NBTBTF-10, showed good p-type transistor behaviour with a hole mobility of 0.24 cm(2) V-1 s(-1) and an on/off ratio of 10(6)-10(7) which was achieved at a lower annealing temperature of 140 degrees C, suggesting the important contribution of the dipole-dipole interactions induced by the fluorine atoms in the molecular packing. As a result, the naphtho[2,1-b:3,4-b']bisthieno[3,2-b][1]benzothiophene framework shows promise as a useful building block to construct organic semiconductors for next-generation high performance organic electronics.
收录类别	SCI
语种	英语
公开日期	2016-05-09
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/27767]
专题	化学研究所_有机固体实验室
作者单位	1.Hong Kong Baptist Univ, Dept Chem, Inst Mol Funct Mat, Kowloon Tong, Hong Kong, Peoples R China 2.Hong Kong Baptist Univ, Inst Adv Mat, Kowloon Tong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Li, Zhaoguang,Zhang, Ji,Zhang, Kai,et al. Naphtho[2,1-b:3,4-b ']bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors[J]. JOURNAL OF MATERIALS CHEMISTRY C,2015,3(31):8024-8029.
APA	Li, Zhaoguang.,Zhang, Ji.,Zhang, Kai.,Zhang, Weifeng.,Guo, Lei.,...&Wong, Man Shing.(2015).Naphtho[2,1-b:3,4-b ']bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors.JOURNAL OF MATERIALS CHEMISTRY C,3(31),8024-8029.
MLA	Li, Zhaoguang,et al."Naphtho[2,1-b:3,4-b ']bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors".JOURNAL OF MATERIALS CHEMISTRY C 3.31(2015):8024-8029.