Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors | |
Lin L (Lin L.) ; Zhen HL (Zhen H. L.) ; Li N (Li N.) ; Lu W (Lu W.) ; Weng QC (Weng Q. C.) ; Xiong DY (Xiong D. Y.) ; Liu FQ (Liu F. Q.) | |
刊名 | applied physics letters |
2010 | |
卷号 | 97期号:19页码:art. no. 193511 |
关键词 | DETECTORS |
通讯作者 | lu, w, chinese acad sci, natl lab infrared phys, shanghai inst tech phys, shanghai 200083, peoples r china. 电子邮箱地址: luwei@mail.sitp.ac.cn |
合作状况 | 国内 |
英文摘要 | the dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. a sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. the dark current is determined by the additive mode of two activation energies: e-a,e-micro from the built-in potential in the microscale and e-a,e-nano related to the thermally assisted tunneling in nanoscale. the activation energies e-a,e-micro and e-a,e-nano decrease exponentially and linearly with increasing applied electric field, respectively.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-12t07:40:20z no. of bitstreams: 1 sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors.pdf: 355974 bytes, checksum: f86e06922a39595b51293933a4e487fb (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-12t08:06:23z (gmt) no. of bitstreams: 1 sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors.pdf: 355974 bytes, checksum: f86e06922a39595b51293933a4e487fb (md5); made available in dspace on 2010-12-12t08:06:23z (gmt). no. of bitstreams: 1 sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors.pdf: 355974 bytes, checksum: f86e06922a39595b51293933a4e487fb (md5) previous issue date: 2010; this work was financially supported by the national basic research program of china (grant no. 2006cb921507), national science foundation of china (grant nos. 10990100 and 60906058), and shanghai committee of science and technology (grant no. 08dz1400701).; 国内 |
学科主题 | 半导体材料 |
收录类别 | SCI |
资助信息 | this work was financially supported by the national basic research program of china (grant no. 2006cb921507), national science foundation of china (grant nos. 10990100 and 60906058), and shanghai committee of science and technology (grant no. 08dz1400701). |
语种 | 英语 |
公开日期 | 2010-12-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/20667] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Lin L ,Zhen HL ,Li N ,et al. Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors[J]. applied physics letters,2010,97(19):art. no. 193511. |
APA | Lin L .,Zhen HL .,Li N .,Lu W .,Weng QC .,...&Liu FQ .(2010).Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors.applied physics letters,97(19),art. no. 193511. |
MLA | Lin L ,et al."Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors".applied physics letters 97.19(2010):art. no. 193511. |
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