Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中科院半导体材料科学重点实验室

	Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain
	Yin CM (Yin Chunming) ; Shen B (Shen Bo) ; Zhang Q (Zhang Qi) ; Xu FJ (Xu Fujun) ; Tang N (Tang Ning) ; Cen LB (Cen Longbin) ; Wang XQ (Wang Xinqiang) ; Chen YH (Chen Yonghai) ; Yu JL (Yu Jinling)
刊名	applied physics letters
	2010
卷号	97 期号:18 页码:art. no. 181904
合作状况	国内
英文摘要	the spin splitting in gan-based heterostructures has been investigated by means of circular photogalvanic effect experiments under uniaxial strain. the ratios of rashba and dresselhaus spin-orbit coupling coefficients (r/d ratios) have been measured in alxga1-xn/gan heterostructures with various al compositions. it is found that the r/d ratio increases from 4.1 to 19.8 with the al composition of the alxga1-xn barrier varied from 15% to 36%. the dresselhaus coefficient of bulk gan is experimentally obtained to be 0.4 ev angstrom(3). the results indicate that the spin splitting in gan-based heterostructures can be modulated effectively by the polarization-induced electric fields.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05t03:43:43z no. of bitstreams: 1 rashba and dresselhaus spin-orbit coupling in gan-based heterostructures probed by the circular photogalvanic effect under uniaxial strain.pdf: 244365 bytes, checksum: 76a520b4cfc0c4d93e2ccc965ab98b41 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05t03:59:13z (gmt) no. of bitstreams: 1 rashba and dresselhaus spin-orbit coupling in gan-based heterostructures probed by the circular photogalvanic effect under uniaxial strain.pdf: 244365 bytes, checksum: 76a520b4cfc0c4d93e2ccc965ab98b41 (md5); made available in dspace on 2010-12-05t03:59:13z (gmt). no. of bitstreams: 1 rashba and dresselhaus spin-orbit coupling in gan-based heterostructures probed by the circular photogalvanic effect under uniaxial strain.pdf: 244365 bytes, checksum: 76a520b4cfc0c4d93e2ccc965ab98b41 (md5) previous issue date: 2010; this work was supported by the national natural science foundation of china (grant nos. 60990313, 10774001, 60806042, and 60736033), and national basic research program of china (grant nos. 2006cb604908 and 2006cb921607).; 国内
学科主题	半导体材料
收录类别	SCI
资助信息	this work was supported by the national natural science foundation of china (grant nos. 60990313, 10774001, 60806042, and 60736033), and national basic research program of china (grant nos. 2006cb604908 and 2006cb921607).
语种	英语
公开日期	2010-12-05
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20652]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yin CM ,Shen B ,Zhang Q ,et al. Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain[J]. applied physics letters,2010,97(18):art. no. 181904.
APA	Yin CM .,Shen B .,Zhang Q .,Xu FJ .,Tang N .,...&Yu JL .(2010).Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain.applied physics letters,97(18),art. no. 181904.
MLA	Yin CM ,et al."Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain".applied physics letters 97.18(2010):art. no. 181904.