Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

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	Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers
	Tang HM (Tang Hai-Ma) ; Zheng ZS (Zheng Zhong-Shan) ; Zhang EX (Zhang En-Xia) ; Yu F (Yu Fang) ; Li N (Li Ning) ; Wang NJ (Wang Ning-Juan)
刊名	chinese physics b
	2010
卷号	19 期号:10 页码:art. no. 106106
关键词	silicon-on-insulator wafers radiation hardness nitrogen implantation
通讯作者	zheng, zs, univ jinan, dept phys, jinan 250022, peoples r china. 电子邮箱地址: zszheng513@163.com
合作状况	国内
英文摘要	摘要: in order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10(16)cm(-2), and subsequent annealing was performed at 1100 degrees c. the effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. the results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. the nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. in particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. after 300-krad(si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. in addition, the wafers were analysed by the fourier transform infrared spectroscopy technique, and some useful results have been obtained.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-02t01:09:51z no. of bitstreams: 1 influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers.pdf: 848940 bytes, checksum: e8a22b738e1a7d6f0478e9736b943302 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-02t02:02:21z (gmt) no. of bitstreams: 1 influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers.pdf: 848940 bytes, checksum: e8a22b738e1a7d6f0478e9736b943302 (md5); made available in dspace on 2010-11-02t02:02:21z (gmt). no. of bitstreams: 1 influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers.pdf: 848940 bytes, checksum: e8a22b738e1a7d6f0478e9736b943302 (md5) previous issue date: 2010; project supported by the doctoral science foundation of university of jinan.; 国内
学科主题	微电子学
收录类别	SCI
资助信息	project supported by the doctoral science foundation of university of jinan.
语种	英语
公开日期	2010-11-02 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13907]
专题	半导体研究所_半导体集成技术工程研究中心
推荐引用方式 GB/T 7714	Tang HM ,Zheng ZS ,Zhang EX ,et al. Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers[J]. chinese physics b,2010,19(10):art. no. 106106.
APA	Tang HM ,Zheng ZS ,Zhang EX ,Yu F ,Li N ,&Wang NJ .(2010).Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers.chinese physics b,19(10),art. no. 106106.
MLA	Tang HM ,et al."Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers".chinese physics b 19.10(2010):art. no. 106106.