Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor

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	Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor
	Qi QO (Qi Qiong) ; Yu AF (Yu Aifang) ; Wang LM (Wang Liangmin) ; Jiang C (Jiang Chao)
刊名	journal of nanoscience and nanotechnology
	2010
卷号	10 期号:11 sp. iss. si 页码:7103-7107
关键词	Organic Field-Effect Transistor Dielectric Surface Energy Initial Nucleation Mobility Grain Size
通讯作者	jiang, c, natl ctr nanosci & technol, 1 beiyitiao zhongguancun, beijing 100190, peoples r china.
合作状况	国内
英文摘要	the influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. we have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/sio2, polystyrene/sio2, and pmma/sio2 bi-layered dielectrics and also the bare sio2 dielectric. atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in stranski-kranstanow growth mode on all the dielectrics. however, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. with the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. the performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited pentacene film, and it had no relationship to the final particle size of the thick pentacene film. the field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/vs with on/off ratio over 3 x 10(7) on the ps/sio2 where the lowest surface energy existed among all the dielectrics. for comparison, the values of mobility and on/off ratio were 0.42 cm(2)/vs and 1 x 10(6) for thin film transistor deposited directly on bare sio2 having the highest surface energy.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-30t05:29:53z no. of bitstreams: 1 behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor.pdf: 1358685 bytes, checksum: 75a343131b9900d4bb609ceceb8e6a91 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-30t05:42:34z (gmt) no. of bitstreams: 1 behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor.pdf: 1358685 bytes, checksum: 75a343131b9900d4bb609ceceb8e6a91 (md5); made available in dspace on 2010-11-30t05:42:34z (gmt). no. of bitstreams: 1 behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor.pdf: 1358685 bytes, checksum: 75a343131b9900d4bb609ceceb8e6a91 (md5) previous issue date: 2010; 国内
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-11-30 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20647]
专题	半导体研究所_光电子器件国家工程中心
推荐引用方式 GB/T 7714	Qi QO ,Yu AF ,Wang LM ,et al. Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor[J]. journal of nanoscience and nanotechnology,2010,10(11 sp. iss. si):7103-7107.
APA	Qi QO ,Yu AF ,Wang LM ,&Jiang C .(2010).Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor.journal of nanoscience and nanotechnology,10(11 sp. iss. si),7103-7107.
MLA	Qi QO ,et al."Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor".journal of nanoscience and nanotechnology 10.11 sp. iss. si(2010):7103-7107.