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	Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots
	Li GH ; Chen Y ; Fung ZL ; Ding K ; Han HX ; Zhou W ; Wang ZG
	2001
会议名称	9th international conference on high pressure semiconductor physics (hpsp9)
会议日期	sep 24-28, 2000
会议地点	sapporo, japan
关键词	HYDROSTATIC-PRESSURE PHOTOLUMINESCENCE GAAS LUMINESCENCE GROWTH INSB GASB
页码	157-162
通讯作者	li gh chinese acad sci inst semicond natl lab superlattices & microstruct pob 912 beijing 100083 peoples r china.
中文摘要	the photoluminescence (pl) of in0.55al0.45as/al0.5ga0.5as self-assembled quantum dots has been measured at 15 and 80 k under hydrostatic pressure. the lateral size of the dots ranges from 7 to 62 nm. the emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-i structure with lowest conduction band at the gamma -valley. however, the pl peak of dots with 7 nm diameter moves to lower energy with increasing pressure. it is a typical character for the x-related transition. then these small dots have a type-ii structure with the x-valley as the lowest conduction level. an envelope-function calculation confirms that the gamma -like exciton transition energy will rise above the x-like transition energy in the in0.55al0.45as/al0.5ga0.5as structure if the dot size is small enough.
英文摘要	the photoluminescence (pl) of in0.55al0.45as/al0.5ga0.5as self-assembled quantum dots has been measured at 15 and 80 k under hydrostatic pressure. the lateral size of the dots ranges from 7 to 62 nm. the emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-i structure with lowest conduction band at the gamma -valley. however, the pl peak of dots with 7 nm diameter moves to lower energy with increasing pressure. it is a typical character for the x-related transition. then these small dots have a type-ii structure with the x-valley as the lowest conduction level. an envelope-function calculation confirms that the gamma -like exciton transition energy will rise above the x-like transition energy in the in0.55al0.45as/al0.5ga0.5as structure if the dot size is small enough.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:21导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:21z (gmt). no. of bitstreams: 1 2925.pdf: 169393 bytes, checksum: ee842c9cef2b54a5f53b651741429c07 (md5) previous issue date: 2001; hokkaido univ, grad sch sci.; phys soc japan.; japan soc high pressure sci & technol.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	hokkaido univ, grad sch sci.; phys soc japan.; japan soc high pressure sci & technol.
会议录	physica status solidi b-basic research, 223 (1)
会议录出版者	wiley-v c h verlag gmbh ; po box 10 11 61, d-69451 berlin, germany
会议录出版地	po box 10 11 61, d-69451 berlin, germany
学科主题	半导体物理
语种	英语
ISSN号	0370-1972
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14959]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li GH,Chen Y,Fung ZL,et al. Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots[C]. 见:9th international conference on high pressure semiconductor physics (hpsp9). sapporo, japan. sep 24-28, 2000.

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