In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD

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	In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
	Sun GS ; Luo MC ; Wang L ; Zhu SR ; Li JM ; Zeng YP ; Lin LY
	2002
会议名称	international conference on silicon carbide and related materials
会议日期	oct 28-nov 02, 2001
会议地点	tsukuba, japan
关键词	3C-SiC in-situ doping low-pressure CVD sapphire substrate CHEMICAL-VAPOR-DEPOSITION COMPETITION EPITAXY
页码	339-342
通讯作者	sun gs chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	the heteroepitaxial growth of n-type and p-type 3c-sic on (0001) sapphire substrates has been performed with a supply of sih4+c2h4+h-2 system by introducing ammonia (nh3) and diborane (b2h6) precursors, respectively, into gas mixtures. intentionally incorporated nitrogen impurity levels were affected by changing the si/c ratio within the growth reactor. as an acceptor, boron can be added uniformly into the growing 3c-sic epilayers. nitrogen-doped 3c-sic epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.
英文摘要	the heteroepitaxial growth of n-type and p-type 3c-sic on (0001) sapphire substrates has been performed with a supply of sih4+c2h4+h-2 system by introducing ammonia (nh3) and diborane (b2h6) precursors, respectively, into gas mixtures. intentionally incorporated nitrogen impurity levels were affected by changing the si/c ratio within the growth reactor. as an acceptor, boron can be added uniformly into the growing 3c-sic epilayers. nitrogen-doped 3c-sic epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:11导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:11z (gmt). no. of bitstreams: 1 2869.pdf: 769391 bytes, checksum: d4e63d8e9c90fa22de99ef8b0d87adb4 (md5) previous issue date: 2002; 会议赞助商: sci& technol promot fdn ibaraki.; commwmorat assoc japan world exposit.; fdn promot mat sci & technol japan.; kansai res fdn technol promot.; murate sci fdn.; ogasawara fdn promot sci & engn.; res fdn electrotechnol chubu.; support ctr adv telecommunicat technol res.; telecommunicat adv fdn.; aro-fe.; aoard.; onrifo.; cree inc.; denso corp.; emcore corp.; epigress ab.; fuji elect corp res & dev ltd.; furukawa elect co ltd.; hitachi ltd.; kansai elect power co inc.; matsushita elect ind co inc.; mitsubishi elect corp.; mitsubishi mat corp.; new japan radio co ltd.; new met & chem corp ltd.; nichia corp.; nippon steel corp.; nissan motor co ltd.; nisso shoji co ltd.; oki elect ind co ltd.; rohm co ltd.; sanyo elect co ltd.; sharp corp.; shindengen elect mfg co ltd.; shin-etsu hansotai co ltd.; showa denko k k.; sony corp.; sterling semiconductor inc.; sumitomo corp.; sumitomo elect ind ltd.; sumitomo osaka cement co ltd.; toshiba corp.; toyoda gosei co ltd.; toyoda cent r&d labs inc.; toyo tanso co ltd.; ulvac inc.; universal syst co ltd.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	会议赞助商: sci& technol promot fdn ibaraki.; commwmorat assoc japan world exposit.; fdn promot mat sci & technol japan.; kansai res fdn technol promot.; murate sci fdn.; ogasawara fdn promot sci & engn.; res fdn electrotechnol chubu.; support ctr adv telecommunicat technol res.; telecommunicat adv fdn.; aro-fe.; aoard.; onrifo.; cree inc.; denso corp.; emcore corp.; epigress ab.; fuji elect corp res & dev ltd.; furukawa elect co ltd.; hitachi ltd.; kansai elect power co inc.; matsushita elect ind co inc.; mitsubishi elect corp.; mitsubishi mat corp.; new japan radio co ltd.; new met & chem corp ltd.; nichia corp.; nippon steel corp.; nissan motor co ltd.; nisso shoji co ltd.; oki elect ind co ltd.; rohm co ltd.; sanyo elect co ltd.; sharp corp.; shindengen elect mfg co ltd.; shin-etsu hansotai co ltd.; showa denko k k.; sony corp.; sterling semiconductor inc.; sumitomo corp.; sumitomo elect ind ltd.; sumitomo osaka cement co ltd.; toshiba corp.; toyoda gosei co ltd.; toyoda cent r&d labs inc.; toyo tanso co ltd.; ulvac inc.; universal syst co ltd.
会议录	silicon carbide and related materials 2001, pts 1 and 2, proceedings, 389-3
会议录出版者	trans tech publications ltd ; brandrain 6, ch-8707 zurich-uetikon, switzerland
会议录出版地	brandrain 6, ch-8707 zurich-uetikon, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0255-5476
ISBN号	0-87849-894-x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14889]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun GS,Luo MC,Wang L,et al. In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD[C]. 见:international conference on silicon carbide and related materials. tsukuba, japan. oct 28-nov 02, 2001.