The SPER and characteristics of Si1-yCy alloys

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	The SPER and characteristics of Si1-yCy alloys
	Yu Z ; Yu JZ ; Cheng BW ; Lei ZL ; Li DZ ; Wang QM ; Liang JW
	1998
会议名称	conference on integrated optoelectronics ii
会议日期	sep 18-19, 1998
会议地点	beijing, peoples r china
关键词	Si1-yCy alloys ion implantation solid phase epitaxy recrystallization
页码	18-22
通讯作者	yu z chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	\si1-ycy alloys with carbon composition of 0.5 at.% were successfully grown on n-si(100) substrate by solid phase epitaxy recraystallization. the result was presented in this paper. with the help of the sio2 capping layer, rather uniform carbon profile in amorphous si layer was obtained by dual-energy implantation. since ion-flow was small and implantation time was long enough, the emergency of beta-sic was avoided and the dynamic annealing effect was depressed. the pre-amorphization of the si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. as a result, si1-ycy alloys with high quality was recrystallized on si substrate.
英文摘要	\si1-ycy alloys with carbon composition of 0.5 at.% were successfully grown on n-si(100) substrate by solid phase epitaxy recraystallization. the result was presented in this paper. with the help of the sio2 capping layer, rather uniform carbon profile in amorphous si layer was obtained by dual-energy implantation. since ion-flow was small and implantation time was long enough, the emergency of beta-sic was avoided and the dynamic annealing effect was depressed. the pre-amorphization of the si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. as a result, si1-ycy alloys with high quality was recrystallized on si substrate.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:18z (gmt). no. of bitstreams: 1 3032.pdf: 216196 bytes, checksum: c6eef61184852e4fcce79eee3f1653da (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie int soc opt engn.; cos chinese opt soc.; coema.
会议录	integrated optoelectronics ii, 3551
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-3012-9
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13859]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu Z,Yu JZ,Cheng BW,et al. The SPER and characteristics of Si1-yCy alloys[C]. 见:conference on integrated optoelectronics ii. beijing, peoples r china. sep 18-19, 1998.