Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

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	Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD
	Wang LS ; Yue GZ ; Liu XL ; Wang XH ; Wang CX ; Wang D ; Lu DC ; Wang ZG
	1998
会议名称	2nd international symposium on blue laser and light emitting diodes (2nd isblled)
会议日期	sep 29-oct 02, 1998
会议地点	chiba, japan
关键词	METASTABILITY ANTISITE
页码	560-563
通讯作者	wang ls chinese acad sci inst semicond lab semicond mat sci beijing 100083 peoples r china.
中文摘要	unintentionally doped and si-doped single crystal n-gan films have been grown on alpha-al2o3 (0001) substrates by lp-mocvd. room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30ev, whereas the spectrum for a si-doped sample was composed of a dominant peak of 2.19ev and a shoulder of 2.32ev. at different temperatures, photoconductance buildup and its decay were also observed for both samples.. the likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either ga vacancy(v-ga)/ga vacancy complex induced by impurities or n antisite (n-ga), will be proposed.
英文摘要	unintentionally doped and si-doped single crystal n-gan films have been grown on alpha-al2o3 (0001) substrates by lp-mocvd. room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30ev, whereas the spectrum for a si-doped sample was composed of a dominant peak of 2.19ev and a shoulder of 2.32ev. at different temperatures, photoconductance buildup and its decay were also observed for both samples.. the likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either ga vacancy(v-ga)/ga vacancy complex induced by impurities or n antisite (n-ga), will be proposed.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:07z (gmt). no. of bitstreams: 0 previous issue date: 1998; japan soc promot sci, 162nd & 125th comm.; support ctr adv telecommun technol res fdn.; nippon sheet glass fdn mat sci.; res fdn electrotechnol chubu.; inoue fdn sci.; chiba convent bureau.; ogasawara fdn promot sci & engn.; izumi sci & technol fdn.; murata sci fdn.; telecommun advancement fdn.; suzuki fdn.; futaba electr memorial fdn.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	japan soc promot sci, 162nd & 125th comm.; support ctr adv telecommun technol res fdn.; nippon sheet glass fdn mat sci.; res fdn electrotechnol chubu.; inoue fdn sci.; chiba convent bureau.; ogasawara fdn promot sci & engn.; izumi sci & technol fdn.; murata sci fdn.; telecommun advancement fdn.; suzuki fdn.; futaba electr memorial fdn.
会议录	blue laser and light emitting diodes ii
会议录出版者	ohmsha ltd ; 1-3 kanda nishiki-cho, chiyoda-ku, tokyo, 101, japan
会议录出版地	1-3 kanda nishiki-cho, chiyoda-ku, tokyo, 101, japan
学科主题	半导体材料
语种	英语
ISBN号	4-274-90245-5
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13807]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang LS,Yue GZ,Liu XL,et al. Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD[C]. 见:2nd international symposium on blue laser and light emitting diodes (2nd isblled). chiba, japan. sep 29-oct 02, 1998.