A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth
	Zhang RY ; Dong J ; Zhou F ; Zhu HL ; Shu HY ; Bian J ; Wang LF ; Tian HL ; Wang W
	2001
会议名称	asia-pacific optical and wireless communications conference (apoc 2001)
会议日期	nov 12-15, 2001
会议地点	beijing, peoples r china
关键词	SPOT-SIZE CONVERTER GAIN
页码	116-123
通讯作者	zhang ry chinese acad sci inst semicond natl res ctr optoelect technol pob 912 beijing 100083 peoples r china.
中文摘要	a novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. the active layer consists of graded tensile strained bulk-like structure. which can not only enhance tm mode material gain and further realize polarization-insensitivity, but also get a large 3db bandwidth due to different strain introduced into the active layer. 3db bandwidth more than 40nm. 65nm has been obtained in die experiment and theory, respectively. the characteristics of such polarization insensitive structure have been analyzed, the influence of the amount of strain and of the thickness of strain layer on the polarization insensitivity has been discussed.
英文摘要	a novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. the active layer consists of graded tensile strained bulk-like structure. which can not only enhance tm mode material gain and further realize polarization-insensitivity, but also get a large 3db bandwidth due to different strain introduced into the active layer. 3db bandwidth more than 40nm. 65nm has been obtained in die experiment and theory, respectively. the characteristics of such polarization insensitive structure have been analyzed, the influence of the amount of strain and of the thickness of strain layer on the polarization insensitivity has been discussed.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:34z (gmt). no. of bitstreams: 1 2835.pdf: 423522 bytes, checksum: e3c1fa1436ad9145f9c7d76d634b1159 (md5) previous issue date: 2001; spie.; china opt & optoelectr manufacturers assoc.; minist informat ind.; china inst commun.; nel ntt electr corp.; credit suisse first boston technol grp.; china telecom.; huawei technologies.; zte corp.; sany optilayer co ltd.; dateng telecom.; photon technol.; o net commun ltd.; china minist sci & technol.; alcatel.; corning.; australia opt soc.; beijing univ posts & telecommun.; korea assoc photon ind dev.; optoelectr ind dev assoc.; optoelectr ind & technol dev assoc.; opt soc india.; opt soc japan.; opt soc korea.; photon ind dev assoc.; photon assoc.; spie asia pacific chapters.; spie tech grp opt networks.; tsinghua univ.; chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie.; china opt & optoelectr manufacturers assoc.; minist informat ind.; china inst commun.; nel ntt electr corp.; credit suisse first boston technol grp.; china telecom.; huawei technologies.; zte corp.; sany optilayer co ltd.; dateng telecom.; photon technol.; o net commun ltd.; china minist sci & technol.; alcatel.; corning.; australia opt soc.; beijing univ posts & telecommun.; korea assoc photon ind dev.; optoelectr ind dev assoc.; optoelectr ind & technol dev assoc.; opt soc india.; opt soc japan.; opt soc korea.; photon ind dev assoc.; photon assoc.; spie asia pacific chapters.; spie tech grp opt networks.; tsinghua univ.
会议录	apoc 2001: asia-pacific optical and wireless communications:optoelectronics, materials, and devices for communications, 4580
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-4310-7
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13647]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang RY,Dong J,Zhou F,et al. A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth[C]. 见:asia-pacific optical and wireless communications conference (apoc 2001). beijing, peoples r china. nov 12-15, 2001.