Tuning Surface Wettability of InxGa(1-x)N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination
Cheng, GS (程国胜); Su, RG (苏瑞巩); Song, Q (宋琴); Cheng, GS (程国胜); Kong, T (孔涛)
刊名LANGMUIR
2011-11-01
卷号27期号:21页码:13220-13225
通讯作者Cheng, GS (程国胜)
英文摘要We report a facile route to reversibly tune surface wettability of InxGa((1-x))N (InGaN) nanotip arrays by octyl-phosphonic acid (OPA) modification and ultraviolet-visible (UV-vis) light illuminations. Well aligned InGaN nanotip arrays were grown by chemical vapor deposition (CVD). OPA was covalently attached to the InGaN nanotip surface, which was initially oxidized in Piranha solution. Because of the high surface energy of polar groups, OPA-coated InGaN nanotip arrays demonstrated superhydrophobic properties (contact angle of 154 degrees). Transitions between superhydrophobicity and hydrophilicity were obtained through OPA adsorption and UV-vis light illumination. The LnGaN nanotip surface chemistry was further characterized by X-ray photoelectron spectroscopy (XPS), which suggested a scission mechanism at P-C and MO-P (M = In and Ga) bonds of bound OPA molecules. Meanwhile, no significant surface degradation was observed after the OPA modification and phototreatments.
收录类别SCI ; EI
语种英语
WOS记录号WOS:000296211800057
公开日期2012-07-25
内容类型期刊论文
源URL[http://58.210.77.100/handle/332007/516]  
专题苏州纳米技术与纳米仿生研究所_纳米生物医学与安全研究部_程国胜团队
通讯作者Cheng, GS (程国胜); Cheng, GS (程国胜)
推荐引用方式
GB/T 7714
Cheng, GS ,Su, RG ,Song, Q ,et al. Tuning Surface Wettability of InxGa(1-x)N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination[J]. LANGMUIR,2011,27(21):13220-13225.
APA Cheng, GS ,Su, RG ,Song, Q ,Cheng, GS ,&Kong, T .(2011).Tuning Surface Wettability of InxGa(1-x)N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination.LANGMUIR,27(21),13220-13225.
MLA Cheng, GS ,et al."Tuning Surface Wettability of InxGa(1-x)N Nanotip Arrays by Phosphonic Acid Modification and Photoillumination".LANGMUIR 27.21(2011):13220-13225.
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