Conductivity enhancement in AlGaN:Mg by suppressing the incorporation of carbon impurity

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Conductivity enhancement in AlGaN:Mg by suppressing the incorporation of carbon impurity
	Tian, AQ(田爱琴); Liu, JP(刘建平); Ikeda, M; Zhang, SM(张书明); Li, ZC(李增成); Feng, MX(冯美鑫); Zhou, K(周堃); Li, DY(李德尧); Zhang, LQ(张立群); Wen, PY(温鹏雁)
刊名	APPLIED PHYSICS EXPRESS
	2015
卷号	8 期号:5 页码:4
通讯作者	Liu, JP (刘建平)
英文摘要	Growth conditions were explored to suppress the carbon impurity incorporation in AlGaN:Mg grown at low temperatures. Electrical properties of Al0.07Ga0.93N:Mg samples with various carbon concentrations were investigated by Hall measurements. A clear correlation between carbon concentration and electrical conductivity has been found. By reducing the carbon concentration from 2 x 10(18) to 5 x 10(16) cm(-3), the resistivity of p-Al0.07Ga0.93N decreases from 7.4 to 2.2 Omega.cm. From the results of the analysis of the charge neutrality equation, we found that the carbon concentration is close to the compensating donor concentration in the AlGaN:Mg samples, which suggests that carbon acts as the main compensating donor in AlGaN:Mg. (C) 2015 The Japan Society of Applied Physics
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3381]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Tian, AQ,Liu, JP,Ikeda, M,et al. Conductivity enhancement in AlGaN:Mg by suppressing the incorporation of carbon impurity[J]. APPLIED PHYSICS EXPRESS,2015,8(5):4.
APA	Tian, AQ.,Liu, JP.,Ikeda, M.,Zhang, SM.,Li, ZC.,...&Yang, H.(2015).Conductivity enhancement in AlGaN:Mg by suppressing the incorporation of carbon impurity.APPLIED PHYSICS EXPRESS,8(5),4.
MLA	Tian, AQ,et al."Conductivity enhancement in AlGaN:Mg by suppressing the incorporation of carbon impurity".APPLIED PHYSICS EXPRESS 8.5(2015):4.