Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition

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	Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition
	Zhou, K(周堃); Ikeda, M; Liu, JP(刘建平); Zhang, SM(张书明); Li, ZC(李增成); Feng, MX(冯美鑫); Tian, AQ(田爱琴); Wen, PY(温鹏雁); Li, DY(李德尧); Zhang, LQ(张立群)
刊名	JOURNAL OF CRYSTAL GROWTH
	2015
卷号	409 期号:0 页码:51-55
关键词	Growth models Metalorganic vapor phase epitaxy Nitrides Semiconducting III-V materials
通讯作者	Ikeda, M (Ikeda, Masao)
英文摘要	InGaN strained bulk layers were grown by low-pressure metalorganic chemical vapor deposition on c-plane GaN/sapphire templates. Two growth regimes, mass transport limited regime and indium desorption regime, were examined for InGaN growth. In the indium desorption regime, more indium source must be fed to keep a constant indium content. In the indium desorption regime, we found an abnormally enhanced GaN growth rate, which was proved to be related to the indium desorption and dependent on the growth temperature and the indium source flow. Due to the enhanced growth rate, the optical quality of In0.16Ga0.84N layers degraded significantly.
收录类别	SCI
语种	英语
公开日期	2015-02-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1822]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Zhou, K,Ikeda, M,Liu, JP,et al. Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2015,409(0):51-55.
APA	Zhou, K.,Ikeda, M.,Liu, JP.,Zhang, SM.,Li, ZC.,...&Yang, H.(2015).Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,409(0),51-55.
MLA	Zhou, K,et al."Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 409.0(2015):51-55.