Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy

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	Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy
	Ji, L(季莲); Tan, M(谭明); Honda, K; Harasawa, R; Yasue, Y; Wu, YY(吴渊渊); Dai, P(代盼); Tackeuchi, A; Bian, LF(边历峰); Lu, SL(陆书龙)
刊名	SOLAR ENERGY MATERIALS AND SOLAR CELLS
	2015
卷号	137 页码:5
关键词	InGaAsP Molecular beam epitaxy Solar cell Quantum efficiency Carrier recombination dynamics
通讯作者	Lu, SL (陆书龙)
英文摘要	We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.45P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.42As indicates that InP is more promising as the back surface field for future solar cell performance improvements. (C) 2015 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3372]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
推荐引用方式 GB/T 7714	Ji, L,Tan, M,Honda, K,et al. Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2015,137:5.
APA	Ji, L.,Tan, M.,Honda, K.,Harasawa, R.,Yasue, Y.,...&Yang, H.(2015).Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy.SOLAR ENERGY MATERIALS AND SOLAR CELLS,137,5.
MLA	Ji, L,et al."Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy".SOLAR ENERGY MATERIALS AND SOLAR CELLS 137(2015):5.