Characterization of the lattice mismatched In-0.68 Ga-0.32 As Material Grown on InP substrate by MOCVD

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	Characterization of the lattice mismatched In-0.68 Ga-0.32 As Material Grown on InP substrate by MOCVD
	Lu, SL(陆书龙); Ji, L(季莲); Zhao, YM(赵勇明); Chen, ZM
刊名	JOURNAL OF INFRARED AND MILLIMETER WAVES
	2013-04
卷号	32 期号:2 页码:118-121
关键词	MOLECULAR-BEAM EPITAXY HIGH-PERFORMANCE CELLS
通讯作者	Zhu, YQ(朱筠清)
英文摘要	The lattice mismatched In-0.68 Ga-0.32 As materials were grown on InP substrate by MOCVD technology. In-AsxP1-x metamorphic buffer layer structures with various As compositions were grown on IRP substrates, which forms an alternative tension and strain offset buffer structure, In this way, we got a strain relaxed InAsxP1-x "virtual" substrate, which is lattice matched to In-0.8 Ga-0.32 As. With an optimized thickness of the buffer layer,the strain was completely relaxed in the "virtual" substrate. The analysis of AFM, BRXRD, TEM and photoluminescence(PL) indicated that this method can effectively improve the quality of the In-0.68 Ga-0.32. As material.
收录类别	SCI
语种	中文
公开日期	2014-01-09
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1268]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
推荐引用方式 GB/T 7714	Lu, SL,Ji, L,Zhao, YM,et al. Characterization of the lattice mismatched In-0.68 Ga-0.32 As Material Grown on InP substrate by MOCVD[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2013,32(2):118-121.
APA	Lu, SL,Ji, L,Zhao, YM,&Chen, ZM.(2013).Characterization of the lattice mismatched In-0.68 Ga-0.32 As Material Grown on InP substrate by MOCVD.JOURNAL OF INFRARED AND MILLIMETER WAVES,32(2),118-121.
MLA	Lu, SL,et al."Characterization of the lattice mismatched In-0.68 Ga-0.32 As Material Grown on InP substrate by MOCVD".JOURNAL OF INFRARED AND MILLIMETER WAVES 32.2(2013):118-121.