Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature

	Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature
	Tao, P; Huang, L; Cheng, HH; Wang, HH; Wu, XS;王焕华
刊名	CHINESE PHYSICS B
	2014
卷号	23 期号:8 页码:88112
关键词	GeSn films high resolution X-ray diffraction fully-strained Raman measurements
英文摘要	We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.
学科主题	Physics
收录类别	SCI
WOS记录号	WOS:000343875300092
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/224900]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	Tao, P,Huang, L,Cheng, HH,et al. Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature[J]. CHINESE PHYSICS B,2014,23(8):88112.
APA	Tao, P,Huang, L,Cheng, HH,Wang, HH,&Wu, XS；王焕华.(2014).Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature.CHINESE PHYSICS B,23(8),88112.
MLA	Tao, P,et al."Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature".CHINESE PHYSICS B 23.8(2014):88112.