Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy

	Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy
	Fan, LL; Chen, S; Wu, YF; Chen, FH; Chu, WS; Chen, X; Zou, CW; Wu, ZY;吴自玉
刊名	APPLIED PHYSICS LETTERS
	2013
卷号	103 期号:13 页码:131914
英文摘要	VO2 epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al2O3 (0001) substrate. The VO2 film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO2 film is discussed in the framework of the hybridization theory and the valence state of vanadium. (C) 2013 AIP Publishing LLC.
学科主题	Physics
收录类别	SCI
WOS记录号	WOS:000325284500035
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/224646]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	Fan, LL,Chen, S,Wu, YF,et al. Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy[J]. APPLIED PHYSICS LETTERS,2013,103(13):131914.
APA	Fan, LL.,Chen, S.,Wu, YF.,Chen, FH.,Chu, WS.,...&Wu, ZY；吴自玉.(2013).Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy.APPLIED PHYSICS LETTERS,103(13),131914.
MLA	Fan, LL,et al."Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy".APPLIED PHYSICS LETTERS 103.13(2013):131914.