Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy

	Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy
	Zhong, J; Deng, JJ; Mao, BH; Xie, T; Sun, XH; Mou, ZG; Hong, CH; Yang, P; Wang, SD;洪才浩
刊名	CARBON
	2012
卷号	50 期号:1 页码:335-338
英文摘要	The evolution of solid state N-doping in graphene has been probed using X-ray absorption near-edge structure (XANES) spectroscopy. The XANES spectra show that the modification of graphene with N species can be achieved by urea attachment at annealing temperatures lower than 300 degrees C. A transition from urea to amino species is observed at 400 degrees C. At higher temperatures, pyridinic and graphitic type doping are achieved. The results indicate that the electronic structure of graphene can be controlled by solid state treatment, involving different N species depending on the annealing process. (C) 2011 Elsevier Ltd. All rights reserved.
学科主题	Chemistry; Materials Science
收录类别	SCI
WOS记录号	WOS:000296548800042
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/223945]
专题	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhong, J,Deng, JJ,Mao, BH,et al. Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy[J]. CARBON,2012,50(1):335-338.
APA	Zhong, J.,Deng, JJ.,Mao, BH.,Xie, T.,Sun, XH.,...&Wang, SD；洪才浩.(2012).Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy.CARBON,50(1),335-338.
MLA	Zhong, J,et al."Probing solid state N-doping in graphene by X-ray absorption near-edge structure spectroscopy".CARBON 50.1(2012):335-338.