A Single Mode 980nm InGaAs/GaAs/AlGaAs Large Optical Cavity Quantum Well Laser with Low Vertical Divergence Angle
Chen Lianghui
刊名半导体学报
2002
卷号23期号:4页码:342-346
中文摘要to achieve high optical power as well as low vertical divergence angle, a new kind of optimized large optical cavity (loc) structure is applied to a ridge waveguide 980nm ingaas/gaas/algaas multi-quantum well laser. the optical power density in the waveguide is successfully reduced. the maximum output power is more than 400mw with a slope efficiency of 0.89w/a and the far-field vertical divergence angle is lowered to 23°.
学科主题半导体器件
收录类别CSCD
资助信息国家高技术研究发展计划(863计划)资助项目(no.863-3 7-43-3( 2))
语种英语
公开日期2010-11-23
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/18135]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Chen Lianghui. A Single Mode 980nm InGaAs/GaAs/AlGaAs Large Optical Cavity Quantum Well Laser with Low Vertical Divergence Angle[J]. 半导体学报,2002,23(4):342-346.
APA Chen Lianghui.(2002).A Single Mode 980nm InGaAs/GaAs/AlGaAs Large Optical Cavity Quantum Well Laser with Low Vertical Divergence Angle.半导体学报,23(4),342-346.
MLA Chen Lianghui."A Single Mode 980nm InGaAs/GaAs/AlGaAs Large Optical Cavity Quantum Well Laser with Low Vertical Divergence Angle".半导体学报 23.4(2002):342-346.
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