Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance

	Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance
	Panpan Li ; Hongjian Li ; Yongbing Zhao ; Junjie Kang ; Zhicong Li ; Zhiqiang Liu ; Xiaoyan Yi ; Jinmin Li ; Guohong Wang
刊名	ieee photonics technology letters
	2015
卷号	27 期号:19 页码:2004-2006
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2016-04-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27030]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Panpan Li,Hongjian Li,Yongbing Zhao,et al. Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance[J]. ieee photonics technology letters,2015,27(19):2004-2006.
APA	Panpan Li.,Hongjian Li.,Yongbing Zhao.,Junjie Kang.,Zhicong Li.,...&Guohong Wang.(2015).Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance.ieee photonics technology letters,27(19),2004-2006.
MLA	Panpan Li,et al."Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance".ieee photonics technology letters 27.19(2015):2004-2006.