High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio  on/ off Grown on  Semi-insulating GaAs Substrates by MOCVD

	High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio on/ off Grown on Semi-insulating GaAs Substrates by MOCVD
	XiangTing Kong ; XuLiang Zhou ; ShiYan Li ; LiJun Qiao ; HongGang Liu ; Wei Wang ; JiaoQing Pan
刊名	chinese physics letters
	2015
卷号	32 期号:3 页码:37301-37303
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26814]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	XiangTing Kong,XuLiang Zhou,ShiYan Li,et al. High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio on/ off Grown on Semi-insulating GaAs Substrates by MOCVD[J]. chinese physics letters,2015,32(3):37301-37303.
APA	XiangTing Kong.,XuLiang Zhou.,ShiYan Li.,LiJun Qiao.,HongGang Liu.,...&JiaoQing Pan.(2015).High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio on/ off Grown on Semi-insulating GaAs Substrates by MOCVD.chinese physics letters,32(3),37301-37303.
MLA	XiangTing Kong,et al."High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio on/ off Grown on Semi-insulating GaAs Substrates by MOCVD".chinese physics letters 32.3(2015):37301-37303.