Transistor Laser With a Current Confinement Aperture in the Emitter Ridge

	Transistor Laser With a Current Confinement Aperture in the Emitter Ridge
	Song Liang ; Lijun Qiao ; Liangshun Han ; Junjie Xu ; Hongliang Zhu ; Wei Wang
刊名	ieee electron device letters
	2015
卷号	36 期号:10 页码:1063-1065
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26802]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Song Liang,Lijun Qiao,Liangshun Han,et al. Transistor Laser With a Current Confinement Aperture in the Emitter Ridge[J]. ieee electron device letters,2015,36(10):1063-1065.
APA	Song Liang,Lijun Qiao,Liangshun Han,Junjie Xu,Hongliang Zhu,&Wei Wang.(2015).Transistor Laser With a Current Confinement Aperture in the Emitter Ridge.ieee electron device letters,36(10),1063-1065.
MLA	Song Liang,et al."Transistor Laser With a Current Confinement Aperture in the Emitter Ridge".ieee electron device letters 36.10(2015):1063-1065.