The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters

	The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters
	W. Liu ; D.G. Zhao ; D.S. Jiang ; P. Chen ; Z.S. Liu ; J.J. Zhu ; X. Li ; F. Liang ; J.P. Liu ; S.M. Zhang ; H. Yang ; Y.T. Zhang ; G.T. Du
刊名	superlattices and microstructures
	2015
卷号	88 页码:50-55
学科主题	光电子学
公开日期	2016-03-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26746]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	W. Liu,D.G. Zhao,D.S. Jiang,et al. The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters[J]. superlattices and microstructures,2015,88:50-55.
APA	W. Liu.,D.G. Zhao.,D.S. Jiang.,P. Chen.,Z.S. Liu.,...&G.T. Du.(2015).The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters.superlattices and microstructures,88,50-55.
MLA	W. Liu,et al."The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters".superlattices and microstructures 88(2015):50-55.