Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth

	Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth
	Zhi Liu ; Juanjuan Wen ; Tianwei Zhou ; Chunlai Xue ; Yuhua Zuo ; Chuanbo Li ; Buwen Cheng ; Qiming Wang
刊名	thin solid films
	2015
卷号	597 页码:39–43
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2016-03-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26701]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Zhi Liu,Juanjuan Wen,Tianwei Zhou,et al. Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth[J]. thin solid films,2015,597:39–43.
APA	Zhi Liu.,Juanjuan Wen.,Tianwei Zhou.,Chunlai Xue.,Yuhua Zuo.,...&Qiming Wang.(2015).Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth.thin solid films,597,39–43.
MLA	Zhi Liu,et al."Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth".thin solid films 597(2015):39–43.