High hole mobility GeSn on insulator formed by self-organized seeding lateral growth

	High hole mobility GeSn on insulator formed by self-organized seeding lateral growth
	Zhi Liu ; Juanjuan Wen ; Xu Zhang ; Chuanbo Li ; Chunlai Xue ; Yuhua Zuo ; Buwen Cheng ; Qiming Wang
刊名	journal of physics d: applied physics
	2015
卷号	48 页码:445103
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2016-02-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26631]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Zhi Liu,Juanjuan Wen,Xu Zhang,et al. High hole mobility GeSn on insulator formed by self-organized seeding lateral growth[J]. journal of physics d: applied physics,2015,48:445103.
APA	Zhi Liu.,Juanjuan Wen.,Xu Zhang.,Chuanbo Li.,Chunlai Xue.,...&Qiming Wang.(2015).High hole mobility GeSn on insulator formed by self-organized seeding lateral growth.journal of physics d: applied physics,48,445103.
MLA	Zhi Liu,et al."High hole mobility GeSn on insulator formed by self-organized seeding lateral growth".journal of physics d: applied physics 48(2015):445103.