Non-stoichiometry Related Deep Level Defects in Semi-insulating InP

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	Non-stoichiometry Related Deep Level Defects in Semi-insulating InP
	Zhao Youwen ; Dong Zhiyuan ; Duan Manlong ; Sun Wenrong ; Yang Zixiang ; Lu Xuru ; Wang Yingli
刊名	人工晶体学报
	2004
卷号	33 期号:4 页码:535-538
中文摘要	semi-insulating (si) inp materials have been prepared under different stoichiometric conditions, including fe-doping in indium-rich melt and high temperature annealing undoped wafer in phosphorus and iron phosphide ambients. deep level defects related with non-stoichiometry have been detected in the si-inp samples. a close relationship between the material quality of electrical property and native deep defects has been revealed by a comprehensive study of defects in as-grown fe-doped and annealed undoped si-inp materials. fe-doped si-inp material with low carrier mobility and poor thermal stability contains a high concentration of deep defects with energy levels in the range of 0.1-0.4ev. the suppression of the defects by high temperature annealing undoped inp leads to the manufacture of high quality si-inp with high mobility and good electrical uniformity. a technology for the growth of high quality si-inp through stoichiometry control has been proposed based on the results.
学科主题	半导体材料
收录类别	CSCD
资助信息	国家自然科学基金
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17451]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao Youwen,Dong Zhiyuan,Duan Manlong,et al. Non-stoichiometry Related Deep Level Defects in Semi-insulating InP[J]. 人工晶体学报,2004,33(4):535-538.
APA	Zhao Youwen.,Dong Zhiyuan.,Duan Manlong.,Sun Wenrong.,Yang Zixiang.,...&Wang Yingli.(2004).Non-stoichiometry Related Deep Level Defects in Semi-insulating InP.人工晶体学报,33(4),535-538.
MLA	Zhao Youwen,et al."Non-stoichiometry Related Deep Level Defects in Semi-insulating InP".人工晶体学报 33.4(2004):535-538.