Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs

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	Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs
	Wang Wei; Wang Wei
刊名	半导体学报
	2004
卷号	25 期号:8 页码:898-902
中文摘要	a semiconductor optical amplifier gate based on tensile-strained quasi-bulk ingaas is developed. at injection current of 80ma,a 3db optical bandwidth of more than 85nm is achieved due to dominant band-filling effect.moreover, the most important is that very low polarization dependence of gain (＜0. 7db),fiber-to-fiber lossless operation current (70～90ma) and a high extinction ratio (＞50db) are simultaneously obtained over this wide 3db optical bandwidth (1520～1609nm) which nearly covers the spectral region of the whole c band (1525～1565nm)and the whole l band (1570～ 1610nm). the gating time is also improved by decreasing carrier lifetime. the wideband polarization-insensitive soa-gate is promising for use in future dense wavelength division multiplexing (dwdm) communication systems.
学科主题	半导体材料
收录类别	CSCD
资助信息	国家重点基础研究发展规划,国家自然科学基金
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17353]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Wei,Wang Wei. Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs[J]. 半导体学报,2004,25(8):898-902.
APA	Wang Wei,&Wang Wei.(2004).Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs.半导体学报,25(8),898-902.
MLA	Wang Wei,et al."Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs".半导体学报 25.8(2004):898-902.