Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler | |
Wang Yonggang ; Ma Xiaoyu ; Zhang Bingyuan ; Chen Meng ; Li Gang ; Zhang Zhigang | |
刊名 | 半导体学报
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2004 | |
卷号 | 25期号:12页码:1595-1598 |
中文摘要 | A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz. |
英文摘要 | A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:52导入数据到SEMI-IR的IR; Made available in DSpace on 2010-11-23T05:05:52Z (GMT). No. of bitstreams: 1 4677.pdf: 291152 bytes, checksum: 26011fd236ca9de7302726515ebb5053 (MD5) Previous issue date: 2004; Institute of Semiconductors,The Chinese Academy of Sciences;School of Laser Engineering,Beijing University of Technology |
学科主题 | 半导体器件 |
收录类别 | CSCD |
语种 | 英语 |
公开日期 | 2010-11-23 ; 2011-04-29 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/17321] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Wang Yonggang,Ma Xiaoyu,Zhang Bingyuan,et al. Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler[J]. 半导体学报,2004,25(12):1595-1598. |
APA | Wang Yonggang,Ma Xiaoyu,Zhang Bingyuan,Chen Meng,Li Gang,&Zhang Zhigang.(2004).Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler.半导体学报,25(12),1595-1598. |
MLA | Wang Yonggang,et al."Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler".半导体学报 25.12(2004):1595-1598. |
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