Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler
Wang Yonggang ; Ma Xiaoyu ; Zhang Bingyuan ; Chen Meng ; Li Gang ; Zhang Zhigang
刊名半导体学报
2004
卷号25期号:12页码:1595-1598
中文摘要A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.
英文摘要A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:52导入数据到SEMI-IR的IR; Made available in DSpace on 2010-11-23T05:05:52Z (GMT). No. of bitstreams: 1 4677.pdf: 291152 bytes, checksum: 26011fd236ca9de7302726515ebb5053 (MD5) Previous issue date: 2004; Institute of Semiconductors,The Chinese Academy of Sciences;School of Laser Engineering,Beijing University of Technology
学科主题半导体器件
收录类别CSCD
语种英语
公开日期2010-11-23 ; 2011-04-29
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/17321]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wang Yonggang,Ma Xiaoyu,Zhang Bingyuan,et al. Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler[J]. 半导体学报,2004,25(12):1595-1598.
APA Wang Yonggang,Ma Xiaoyu,Zhang Bingyuan,Chen Meng,Li Gang,&Zhang Zhigang.(2004).Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler.半导体学报,25(12),1595-1598.
MLA Wang Yonggang,et al."Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler".半导体学报 25.12(2004):1595-1598.
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