Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors

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	Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors
	Jin Peng; Xu Bo
刊名	半导体学报
	2005
卷号	26 期号:8 页码:1519-1523
中文摘要	the wet oxidation of algaas with high al content in a distributed bragg reflectors （dbr） is studied by scanning electron microscopy （sem） and transmission electron microscopy （tem）. some voids distribute along the oxide/gaas interfaces due to the stress induced by the wet oxidation of the algaas layers. these voids decrease the shrinkage of the al2o3 layers to 8% instead of the theoretical 20% when compared to the unoxidized algaas layers. with the extension of oxidation time, the reactants are more completely transported to the front interface and the products are more completely transported out along the porous interfaces. as a result,the oxide quality is better.
学科主题	半导体材料
收录类别	CSCD
资助信息	国家重点基础研究发展计划,国家自然科学基金
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16923]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin Peng,Xu Bo. Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors[J]. 半导体学报,2005,26(8):1519-1523.
APA	Jin Peng,&Xu Bo.(2005).Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors.半导体学报,26(8),1519-1523.
MLA	Jin Peng,et al."Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors".半导体学报 26.8(2005):1519-1523.