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	A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs
	Wang Wei; Wang Wei
刊名	半导体学报
	2005
卷号	26期号:12页码:2309-2314
中文摘要	a novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （sld） with a graded composition bulk ingaas active region is developed by metalorganic vapor phase epitaxy （movpe）. at a 150ma injection current, the full width at half maximum of the emission spectrum of the sld is about 72nm, ranging from 1602 to 1674nm. the emission spectrum is smooth and flat. the ripple of the spectrum is less than 0.3db at any wavelength from 1550 to 1700nm. an output power of 4.3mw is obtained at a 200ma injection current under continuous-wave operation at room temperature. this device is suitable for the applications of light sources for gas detectors and l-band optical fiber communications.
英文摘要	a novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （sld） with a graded composition bulk ingaas active region is developed by metalorganic vapor phase epitaxy （movpe）. at a 150ma injection current, the full width at half maximum of the emission spectrum of the sld is about 72nm, ranging from 1602 to 1674nm. the emission spectrum is smooth and flat. the ripple of the spectrum is less than 0.3db at any wavelength from 1550 to 1700nm. an output power of 4.3mw is obtained at a 200ma injection current under continuous-wave operation at room temperature. this device is suitable for the applications of light sources for gas detectors and l-band optical fiber communications.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:03:46导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:03:46z (gmt). no. of bitstreams: 1 4371.pdf: 419105 bytes, checksum: e795e1c92f724fccd8fedb20b95b8be9 (md5) previous issue date: 2005; 国家自然科学基金重大研究计划资助项目; center of optoelectronics research ＆ development, institute of semiconductors, chinese academy of sciences
学科主题	光电子学
收录类别	CSCD
资助信息	国家自然科学基金重大研究计划资助项目
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16813]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Wei,Wang Wei. A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs[J]. 半导体学报,2005,26(12):2309-2314.
APA	Wang Wei,&Wang Wei.(2005).A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs.半导体学报,26(12),2309-2314.
MLA	Wang Wei,et al."A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs".半导体学报 26.12(2005):2309-2314.

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