An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

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	An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning
	Chen Fangxiong ; Lin Min ; Ma Heping ; Jia Hailong ; Shi Yin ; Dai Forster
刊名	半导体学报
	2009
卷号	30 期号:8 页码:127-131
中文摘要	an asymmetric mosfet-c band-pass filter(bpf)with on chip charge pump auto-tuning is presented.it is implemented in umc (united manufacturing corporation)0.18μm cmos process technology. the filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump outputs 2.663 v, much higher than the power supply voltage, to improve the linearity of the filter. the main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 mhz. the in-band third order harmonic input intercept point(hp3) is 16.621 dbm,wim 50 ω as the source impedance. the input referred noise is about 47.455μvrms. the main filter dissipates 3.528 mw while the auto-tuning system dissipates 2.412 mw from a 1.8 v power supply. the filter with the auto-tuning system occupies 0.592 mm~2 and it can be utilized in gps (global positioning system)and bluetooth systems.
学科主题	人工智能
收录类别	CSCD
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15723]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen Fangxiong,Lin Min,Ma Heping,et al. An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning[J]. 半导体学报,2009,30(8):127-131.
APA	Chen Fangxiong,Lin Min,Ma Heping,Jia Hailong,Shi Yin,&Dai Forster.(2009).An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning.半导体学报,30(8),127-131.
MLA	Chen Fangxiong,et al."An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning".半导体学报 30.8(2009):127-131.