Photoluminescence of GaInP under high pressure

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	Photoluminescence of GaInP under high pressure
	Dong JR ; Li GH ; Wang ZG ; Lu DC ; Liu XL ; Li XB ; Sun DZ ; Kong MY ; Wang ZJ
刊名	journal of applied physics
	1996
卷号	79 期号:9 页码:7177-7182
关键词	VAPOR-PHASE EPITAXY HYDROSTATIC-PRESSURE ORDERED GA0.5IN0.5P GROWTH TEMPERATURE DEPENDENCE GAP SPECTRUM ENERGY
ISSN号	0021-8979
通讯作者	dong jr chinese acad sciinst semicondlab semicond mat scipob 912beijing 100083peoples r china.
中文摘要	photoluminescence of gainp under hydrostatic pressure is investigated. the gamma valley of disordered gainp shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear relationship between lattice constant and hydrostatic pressure. the gamma valleys of ordered gainp rise more slowly than that of the disordered one and the relationship between the band gap and the pressure can not be explained in the same way. taking into account the interactions between the gamma valley and the folded l valleys, as well as, the x valleys, the experimental pressure dependences of the band gap of ordered gainp epilayers are calculated and fitted quite well using first order perturbation theory. the results indicate that simultaneous ordering along [111] and [100] directions can occur in ordered gainp. (c) 1996 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15427]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Dong JR,Li GH,Wang ZG,et al. Photoluminescence of GaInP under high pressure[J]. journal of applied physics,1996,79(9):7177-7182.
APA	Dong JR.,Li GH.,Wang ZG.,Lu DC.,Liu XL.,...&Wang ZJ.(1996).Photoluminescence of GaInP under high pressure.journal of applied physics,79(9),7177-7182.
MLA	Dong JR,et al."Photoluminescence of GaInP under high pressure".journal of applied physics 79.9(1996):7177-7182.