Determination of AlxGa1-xAs Auger sensitivity factors
Chen WD ; Cui YD
刊名applied surface science
1996
卷号100期号:0页码:156-159
关键词ELECTRON SPECTROSCOPY
ISSN号0169-4332
通讯作者chen wd chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要alxga1-xas auger sensitivity factors have been determined by using phi610 scanning auger microprobe with pure elemental standards al, ag and matrix gaas. the quantitative results of alxga1-xas measured by the present method are in very good agreement with x-ray double crystal measurements. it is shown that by using sensitivity factors obtained from the self-instrument, the accuracy of the quantitative aes analysis can be considerably improved compared with that using elemental relative sensitivity factors given by the phi handbook or internal standard method.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-11-17
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/15381]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chen WD,Cui YD. Determination of AlxGa1-xAs Auger sensitivity factors[J]. applied surface science,1996,100(0):156-159.
APA Chen WD,&Cui YD.(1996).Determination of AlxGa1-xAs Auger sensitivity factors.applied surface science,100(0),156-159.
MLA Chen WD,et al."Determination of AlxGa1-xAs Auger sensitivity factors".applied surface science 100.0(1996):156-159.
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