Determination of AlxGa1-xAs Auger sensitivity factors | |
Chen WD ; Cui YD | |
刊名 | applied surface science |
1996 | |
卷号 | 100期号:0页码:156-159 |
关键词 | ELECTRON SPECTROSCOPY |
ISSN号 | 0169-4332 |
通讯作者 | chen wd chinese acad sci inst semicond beijing 100083 peoples r china. |
中文摘要 | alxga1-xas auger sensitivity factors have been determined by using phi610 scanning auger microprobe with pure elemental standards al, ag and matrix gaas. the quantitative results of alxga1-xas measured by the present method are in very good agreement with x-ray double crystal measurements. it is shown that by using sensitivity factors obtained from the self-instrument, the accuracy of the quantitative aes analysis can be considerably improved compared with that using elemental relative sensitivity factors given by the phi handbook or internal standard method. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/15381] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Chen WD,Cui YD. Determination of AlxGa1-xAs Auger sensitivity factors[J]. applied surface science,1996,100(0):156-159. |
APA | Chen WD,&Cui YD.(1996).Determination of AlxGa1-xAs Auger sensitivity factors.applied surface science,100(0),156-159. |
MLA | Chen WD,et al."Determination of AlxGa1-xAs Auger sensitivity factors".applied surface science 100.0(1996):156-159. |
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