Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates
	Liu Y ; Xiao XR ; Li XP ; Xu ZY ; Yuan ZL ; Zeng YP ; Yang CH ; Sun DZ
刊名	journal of photochemistry and photobiology a-chemistry
	1996
卷号	101 期号:0 页码:113-117
关键词	chemical adsorption multiquantum well photoluminescence POROUS SILICON GAAS HETEROSTRUCTURES PASSIVATION ABSORPTION ENERGY CELL
ISSN号	1010-6030
中文摘要	the chemical adsorption of sodium sulphide, ferrocene, hydroquinone and p-methyl-nitrobenzene onto the surface of a gaas/alxga1-xas multiquantum well semiconductor was characterized by steady state and time-resolved photoluminescence (pl) spectroscopy. the changes in the pl response, including the red shift of the emission peak of the exciton in the quantum well and the enhancement of the pl intensity, are discussed in terms of the interactions of the adsorbed molecules with surface states.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15259]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu Y,Xiao XR,Li XP,et al. Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates[J]. journal of photochemistry and photobiology a-chemistry,1996,101(0):113-117.
APA	Liu Y.,Xiao XR.,Li XP.,Xu ZY.,Yuan ZL.,...&Sun DZ.(1996).Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates.journal of photochemistry and photobiology a-chemistry,101(0),113-117.
MLA	Liu Y,et al."Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates".journal of photochemistry and photobiology a-chemistry 101.0(1996):113-117.