CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES PRODUCED BY NITROGEN ION-IMPLANTATION

	CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES PRODUCED BY NITROGEN ION-IMPLANTATION
	FAN TW ; YUAN J ; BROWN LM
刊名	institute of physics conference series
	1987
期号	87 页码:421-426
ISSN号	0951-3248
通讯作者	fan tw univ cambridgecavendish labmadingley rdcambridge cb3 0heengland
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14483]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	FAN TW,YUAN J,BROWN LM. CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES PRODUCED BY NITROGEN ION-IMPLANTATION[J]. institute of physics conference series,1987(87):421-426.
APA	FAN TW,YUAN J,&BROWN LM.(1987).CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES PRODUCED BY NITROGEN ION-IMPLANTATION.institute of physics conference series(87),421-426.
MLA	FAN TW,et al."CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES PRODUCED BY NITROGEN ION-IMPLANTATION".institute of physics conference series .87(1987):421-426.