PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF INP ON GAAS SUBSTRATE GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

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	PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF INP ON GAAS SUBSTRATE GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
	TENG D ; ZHUANG WH
刊名	chinese physics letters
	1990
卷号	7 期号:11 页码:522-525
关键词	BAND-GAP
ISSN号	0256-307x
中文摘要	a high-energy shift of the band-band recombination has been observed in photoluminescence spectra of the strained inp layer grown on gaas substrate. the inp layer is under biaxial compressive strain at temperatures below the growth temperature, because the thermal expansion coefficient of inp is smaller than that of gaas. the strain value determined by the energy shift of the band-edge peak is in good agreement with the calculated thermal strain. a band to carbon acceptor recombination is also identified.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14333]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	TENG D,ZHUANG WH. PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF INP ON GAAS SUBSTRATE GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION[J]. chinese physics letters,1990,7(11):522-525.
APA	TENG D,&ZHUANG WH.(1990).PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF INP ON GAAS SUBSTRATE GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION.chinese physics letters,7(11),522-525.
MLA	TENG D,et al."PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF INP ON GAAS SUBSTRATE GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION".chinese physics letters 7.11(1990):522-525.