INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS

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	INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS
	HSU CC ; JIN GL ; HO J ; CHEN WD
刊名	journal of vacuum science & technology a-vacuum surfaces and films
	1992
卷号	10 期号:4 页码:1020-1028
关键词	THIN-FILMS GAAS CO SI
ISSN号	0734-2101
通讯作者	hsu cc acad sinicainst semicondpob 912100083 beijingpeoples r china
中文摘要	the interfacial reactions between thin films of cobalt and silicon and (100)-oriented gaas substrates in two configurations, co/si/gaas and si/co/gaas, were studied using a variety of techniques including auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. the annealing conditions were 200, 300, 400, 600-degrees-c for 30 min, and rapid thermal annealing for 15 s. it was found that si layer in the co/si/gaas system acts as a barrier at the interface between co and gaas when annealed up to 600-degrees-c. the interfacial reaction between co and si is faster than that between co and gaas in the system of si/co/gaas. the sequence of compound formation for the two metallizations studied (co/si/gaas and si/co/gaas) depends strongly on the sample configuration as well as the layer thickness of si and co (co/si atomic ratio). from our results, it is promising to utilize co/si/gaas multilayer film structure to make a cosi2/gaas contact, and this cosi2 may offer an alternative to the commonly used w silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (mesfet) technologies.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14187]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	HSU CC,JIN GL,HO J,et al. INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS[J]. journal of vacuum science & technology a-vacuum surfaces and films,1992,10(4):1020-1028.
APA	HSU CC,JIN GL,HO J,&CHEN WD.(1992).INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS.journal of vacuum science & technology a-vacuum surfaces and films,10(4),1020-1028.
MLA	HSU CC,et al."INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS".journal of vacuum science & technology a-vacuum surfaces and films 10.4(1992):1020-1028.