STUDY ON PREPARATION OF GAN AND COSI2 EPITAXIAL-FILMS BY MASS ANALYZED LOW-ENERGY DUAL ION-BEAM EPITAXY

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	STUDY ON PREPARATION OF GAN AND COSI2 EPITAXIAL-FILMS BY MASS ANALYZED LOW-ENERGY DUAL ION-BEAM EPITAXY
	YAO ZY ; QIN FG ; REN ZZ ; WANG XM ; LIU ZK ; HUANG DD ; LIN LY ; LAU WM
刊名	vacuum
	1992
卷号	43 期号:11 页码:1059-1060
关键词	DEPOSITION SYSTEM GROWTH C+
ISSN号	0042-207x
通讯作者	yao zy chinese acad sciinst semicondsemicond mat sci labbeijingpeoples r china
中文摘要	the mass analyzed low energy dual ion beam epitaxy (male-dibe) system has been designed and constructed in our laboratory. we believe that the system, which was installed and came into full operation in 1988, is the first facility of this kind. with our system we have carried out studies, for the first time, on compound synthesis of gan and cosi2 epitaxial thin films. rheed and aes results show that gan films, which were deposited on si and sapphire substrates, are monocrystalline and of good stoichiometry. to our knowledge, gan film heteroepitaxially grown on si. which is more lattice-mismatched than gan on sapphire, has not been reported before by other authors. rbs and tem investigations indicated a rather good crystallinity of cosi2 with a distinct interface between cosi2 and the si substrate. the channelling minimum yield chi(min) from the co profile is approximately 4%. the results showed that the dibe system with simultaneous arrival of two beams at the target is particularly useful in the formation of novel compounds at a relatively low substrate temperature.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14173]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	YAO ZY,QIN FG,REN ZZ,et al. STUDY ON PREPARATION OF GAN AND COSI2 EPITAXIAL-FILMS BY MASS ANALYZED LOW-ENERGY DUAL ION-BEAM EPITAXY[J]. vacuum,1992,43(11):1059-1060.
APA	YAO ZY.,QIN FG.,REN ZZ.,WANG XM.,LIU ZK.,...&LAU WM.(1992).STUDY ON PREPARATION OF GAN AND COSI2 EPITAXIAL-FILMS BY MASS ANALYZED LOW-ENERGY DUAL ION-BEAM EPITAXY.vacuum,43(11),1059-1060.
MLA	YAO ZY,et al."STUDY ON PREPARATION OF GAN AND COSI2 EPITAXIAL-FILMS BY MASS ANALYZED LOW-ENERGY DUAL ION-BEAM EPITAXY".vacuum 43.11(1992):1059-1060.