ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON
	LEHTO N ; MARKLUND S ; WANG YL
刊名	solid state communications
	1994
卷号	92 期号:12 页码:987-989
关键词	DISLOCATIONS GERMANIUM DISSOCIATION ENERGY
ISSN号	0038-1098
通讯作者	lehto n lulea univ technoldept physs-97187 luleasweden
中文摘要	the electronic structure of a bounded intrinsic stacking fault in silicon is calculated. the method used is an lcao-scheme (linear combinations of atomic orbitals) taking ten atomic orbitals of s-, p-, and d-type into account. the levels in the band gap are extracted using lanczos' algorithm and a continued fraction representation of the local density of states. we find occupied states located up to 0.3 ev above the valence band maximum (e(v)). this significantly differs from the result obtained for the ideal infinite fault for which the interface state is located at e(v)+ 0.1 ev.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13941]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	LEHTO N,MARKLUND S,WANG YL. ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON[J]. solid state communications,1994,92(12):987-989.
APA	LEHTO N,MARKLUND S,&WANG YL.(1994).ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON.solid state communications,92(12),987-989.
MLA	LEHTO N,et al."ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON".solid state communications 92.12(1994):987-989.